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ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 1 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? applications soic-8 package repeaters base station transceivers high power amplifiers mobile infrastructure lte / wcdma / cdma / wimax product features functional block diagram 400-2700 mhz 15.5 db gain at 2140 mhz +31 dbm p1db +46 dbm output ip3 300 ma quiescent current +5 v single supply mttf > 100 years capable of handling 10:1 vswr @ 5vcc, 2.14 ghz, 31.5 dbm cw pout or 23 dbm wcdma pout lead-free/rohs-compliant soic-8 package general description pin configuration the ah225 is a high dynamic range driver amplifier in a low-cost surface- mount package. the ingap/gaas hbt is able to achieve high performance for various narrowband-tuned application circuits with up to +46 dbm oip3 and +31.2 dbm of compressed 1db power. the integrated active bias circuitry in the devices en ables excellent stable linearity performance over temperature. it is housed in a lead-free/rohs-compliant soic-8 package . all devices are 100% rf and dc tested. the ah225 is targeted for use as a driver amplifier in wireless infrastructure where hi gh linearity and medium power is required. the ah225 is ideal for the final stage of small repeaters or as driver stages for high power amplifiers. in addition, the amplifier can be used for a wide variety of other applications within the 400 to 2700 mhz frequency band. pin # symbol 1 vbias 2, 4, 5 n/c 3 rf_in 6, 7 rf_out 8 iref backside paddle rf/dc gnd ordering information part no. description AH225-S8G 1w high linearity amplifier standard t/r size = 1000 pieces on a 7? reel. not recommended for new designs recommended replacement part: tqp7m9103
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 2 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? specifications absolute maximum ratings parameter rating storage temperature - 65 to 150 c rf input power, cw, 50 , t= 25 c +26 dbm device voltage,v cc , v bias + 8 v device current 900 ma device power +5 w operation of this device outside the parameter ranges give n above may cause permanent damage. recommended operating conditions parameter min typ max unit s v cc + 4.5 +5 + 5.25 v t case - 40 +85 c t j (for >10 6 hours mttf) +200 c electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended opera ting conditions. electrical specifications test conditions unless otherwise noted: v cc = +5 v, i cq = 300 ma, t = +25 c, in a tuned application circuit. parameter conditions min typical max unit s operational frequency range 400 2700 mhz test frequency 2140 mhz gain 13.3 15. 5 db input return lo ss 18 db output return loss 9.4 db output p1db + 30 + 31 .2 dbm output ip3 see note 1 +43 + 4 6 db m wcdma channel power at -50 dbc aclr see note 2 +21.3 dbm noise figure 6 db v cc , v bias + 5 v quiescent current, i cq see note 3 300 350 ma iref 15 ma thermal resistance (jnc. to case) jc 35 c/w notes: 1. 3oip measured with two tones at an output power of +19 dbm / tone separated by 1 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. 2:1 rule give s relative value w.r.t. fundamental tone. 2. 3gpp wcdma, 164dpch, 5 mhz, no clipping, par = 10.2 db at 0.01% probability. 3. this corresponds to the quiescent collector current or opera ting current under small-signal conditions into pins 6 and 7. performance summary table test conditions unless otherwise noted: v cc = +5 v, i cq = 300 ma, t = +25 c, in an application circuit tuned for each frequency. frequency 750 940 1 500 18 4 0 1960 2140 2600 mhz gain 20.1 19.8 1 7 15.1 15.4 15.2 13.2 db input return loss 14.5 10.5 1 7.2 11 15.4 18 19.4 db output retur n loss 7 8.4 11 10.7 8.3 9.4 5.5 db output p1db +30.4 +31 + 31 .3 +30.7 +31.3 +31 +30.5 dbm output ip3 [ see note 4 ] +45 +47.3 + 4 8 +46 +53.6 +47 +48.7 dbm wcdma channel power at -50 dbc aclr +21.2 +21.7 + 22 +21.6 +21.7 +21.4 +21.3 dbm notes: 4. oip3 is measured with two tones at an output power of 20 dbm/tone for 750 mhz, 22 dbm/tone for 940 mhz and 19 dbm/tone f or 1490, 1840, 1960, 2140, 2600 mhz application circuits respectively.
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 3 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? device characterization data 0 5 10 15 20 25 30 35 40 45 0 0.5 1 1.5 2 2.5 3 gain (db) frequency (mhz) gain and max stable gain de-embedded s-parameters gain (db) msg (db) -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 -0.75 -0.5 -0.25 0 0.25 0.5 0.75 input smith chart - 1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 - 1 -0.75 -0.5 -0.25 0 0.25 0.5 0.75 1 output smith chart note: the gain for the unmatched device in 50 ohm system i s shown as the trace in blue color, gain (db). for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gain is shown in the red line, db [msg]. the impedance loss plots are shown from 0.05-4 ghz. s-parameter data v cc = +5 v, i cq = 300 ma, t = +25 c, unmatched 50 ohm system, calibrated to device leads freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -2.90 -165.27 32.12 136.60 -40.91 46.68 -0.94 -74.85 100 -1.57 -171.34 28.59 116.71 -38.86 31.54 -1.66 -113.38 200 -0.99 179.84 23.57 100.17 -37.78 17.25 -1.95 -143.44 400 -0.81 169.25 17.96 86.66 -37.58 7.00 -2.15 -162.82 800 -0.97 152.64 12.56 69.77 -36.47 -0.03 -2.08 -173.99 1000 -1.12 145.10 11.02 62.27 -36.53 -6.84 -2.19 -175.67 1200 -1.25 136.77 10.01 54.20 -35.91 -8.53 -2.20 -177.71 1400 -1.53 128.95 9.29 46.48 -35.54 -14.78 -2.19 -178.63 1800 -2.52 110.16 8.93 27.07 -34.79 -32.76 -2.20 -179.60 2100 -4.69 91.38 9.54 5.44 -33.84 -58.32 -1.92 -179.47 2000 -3.69 98.77 9.27 13.27 -34.06 -50.56 -2.01 179.89 2200 -6.45 86.18 9.79 -4.317 -33.35 -72.56 -1.80 179.99 2400 -13.76 87.27 10.01 -28.04 -33.51 -107.65 -1.25 179.43 2600 -10.27 171.20 8.85 -57.83 -34.02 -157.07 -0.81 175.18 2800 -4.15 159.31 6.56 -84.16 -35.29 156.89 -0.78 171.95 3000 -1.93 143.93 3.19 -104.79 -34.70 116.80 -0.99 167.43 0.05 ghz 4ghz 0.05 ghz 4ghz
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 4 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? reference design 700-850 mhz notes: typical performance 700-850 mhz notes: 1. aclr test set-up: 3gpp wcdma, tm1+64 dpch, +5 mhz off set, par = 10.2 db at 0.01% prob. 2. evm test set-up: 802.16 ? 2004 ofdma, 64 qam ? ?, 1024 f ft, 20 symbols, 30 sub channels. frequency mhz 700 750 800 850 gain db 20 20.1 20.2 20 input return loss db 12 14.5 16 13.3 output return loss db 6 7 8.6 11.5 output p1db dbm + 30.4 + 30.4 + 30.7 + 30.6 output ip3 at 20 dbm/tone, ? f = 1 mhz dbm +44.1 +45 +44.6 +44 wcdma channel power at - 50 dbc aclr [ 1 ] dbm +20.6 +21.2 +21.4 +21 ofdma channel power at 2.5% evm [ 2 ] dbm +22.8 +23.6 +23.3 +23.2 supply voltage, vcc v +5 quiescent collector current, icq ma 300 1. see pc board layout, page 20 for more information. 2. vref j4 turret can be used as control voltage for device po wer down (low = rf off) by setting r8 = 0 and r7 = no connect. 3. the primary rf microstrip characteristic line impedance i s 50 . 4. do not exceed +5.5v on vpd or vcc or tvs diode d3 will be damaged. 5. components shown on the silkscreen but not on the schematic are n ot used. 6. the edge of c6 is placed at 70 mils from the edge of ah225 rfout pin pad (3 at 750 mhz). 7. c5 is placed against the edge of c6. 8. the edge of r5 is placed at 10 mils from the edge of ah225 rfin pin pad (0.5 at 750 mhz). 9. c8 is placed against the edge of r5, l2 against c8 and c9 ag ainst l2. 10. zero ohm jumpers may be replaced with copper traces in the target application layout. 11. dnp means do not place. 12. inductor l3 on vpd line is critical for linearity performanc e. 13. the locations of c11, r2, c10 and c3 are non-critical. the y can be placed closer to the device. 14. ferrite bead fb1 eliminates bypass line resonances between c15 and c1. steward mi0603k300r-10. 15. all components are of 0603 size unless stated otherwise.
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 5 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? typical performance plots 700-850 mhz 17 18 19 20 21 22 600 650 700 750 800 850 900 s21 (db) frequency (mhz) s21 vs. frequency t=+25 c -25 -20 -15 -10 -5 0 600 650 700 750 800 850 900 return loss (db) frequency (mhz) return loss vs. frequency s11 s22 t=+25 c 27 28 29 30 31 32 700 730 760 790 820 850 p1db (dbm) frequency (mhz) p1db vs. frequency t=+25 c -60 -55 -50 -45 -40 -35 19 20 21 22 23 24 25 aclr (dbc) pout (dbm) aclr vs. pout vs. freq 3gpp wcdma,tm1+64dpch,+5 mhz offset t=+25 c 700 mhz 750 mhz 800 mhz 850 mhz 0 0.5 1 1.5 2 2.5 3 19 20 21 22 23 24 evm (%) pout (dbm) evm vs. pout vs. freq ofdm,qam-64,54 mb/s t=+25 c 700 mhz 750 mhz 800 mhz 850 mhz 35 40 45 50 55 17 19 21 23 25 oip3 (dbm) pout / tone (dbm) oip3 vs. pout / tone vs. freq 1 mhz tone spacing t=+25 c 700 mhz 750 mhz 800 mhz 850 mhz
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 6 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? application circuit 920-960 mhz (ah225-s8pcb900) c9 c3 j5 j3 c15 r2 c10 c11 c2 c1 c12 j4 l1 c7 l2 r3 r1 l3 l4 r6 r7 fb1 c17 d3 c3 u1 typical performance 920-960 mhz notes: 1. aclr test set-up: 3gpp wcdma, tm1+64 dpch, +5 mhz off set, par = 10.2 db at 0.01% prob. frequency mhz 920 940 960 gain db 19.7 19.8 19.9 input return loss db 9.6 10.5 10.4 output return loss db 8 8.4 9 out put p1db dbm +31.1 +31 +31.1 output ip3 at 22 dbm/tone, ? f = 1 mhz dbm +46.2 +47.3 +48 wcdma channel power at - 50 dbc aclr [1 ] dbm +21.6 +21.7 +21.6 noise figure db 9.3 9.2 9.3 supply voltage, vcc v +5 quiescent collector current, icq ma 300 notes: 1. see pc board layout, page 20 for more information. 2. vref j4 turret can be used as control voltage for device po wer down (low = rf off) by setting r8 = 0 and r8 = no connect. 3. the primary rf microstrip characteristic line impedance i s 50 . 4. do not exceed +5.5v on vpd or vcc or tvs diode d3 will be damaged. 5. components shown on the silkscreen but not on the schematic are n ot used. 6. the edge of l2 is placed at 170 mils from the edge of ah225 r fin pin pad (8.5 at 940 mhz). 7. the edge of c9 is placed at 80 mils from the edge of ah225 rfin pin pad (4 at 940 mhz). 8. the edge of c2 is placed at 220 mils from the edge of ah225 rfout pin pad (11 at 940 mhz). 9. zero ohm jumpers may be replaced with copper traces in the target application layout. c2 location will need to be re- optimized if replaced with copper trace. 10. dnp means do not place. 11. inductor l3 on vpd line is critical for linearity performanc e. 12. the locations of c11, r2, c10 and c3 are non-critical. they can be placed closer to the device. 13. ferrite bead fb1 eliminates bypass line resonances between c15 and c1. steward mi0603k300r-10. 14. all components are of 0603 size unless stated otherwise. j2 rf output j5 gnd j3 vcc=+5v l1 33 nh 1008 c9 3.9 pf u1 ah225 c17 0.1 uf 0805 c12 1000 pf backside paddle j4 vref c2 5.6 pf fb1 d3 sm05t1g l4 0 l3 22 nh r3 51 r1 120 r8 dnp r6 0 r7 0 l2 3.3 nh c15 47 pf r2 51 c10 22 pf j1 rf input c11 0 c6 0 c3 10 pf c7 10 uf 6032 c1 1000 pf 87 6 5 12 3 4 vpd
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 7 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? typical performance plots 920-960 mhz 17 18 19 20 21 22 920 930 940 950 960 s21 (db) frequency (mhz) s21 vs. frequency - 40 c +25 c +85 c -20 -15 -10 -5 0 920 930 940 950 960 s11 (db) frequency (mhz) s11 vs. frequency - 40 c +25 c +85 c -20 -15 -10 -5 0 920 930 940 950 960 s22 (db) frequency (mhz) s22 vs. frequency - 40 c +25 c +85 c 17 18 19 20 21 22 25 26 27 28 29 30 31 32 gain (db) pout (dbm) gain vs. pout vs. temp frequency = 940 mhz - 40 c +25 c +85 c 300 350 400 450 500 550 600 22 24 26 28 30 32 icc (ma) pout (dbm) icc vs. pout 3gpp wcdma,tm164dpch,5 mhz offset,940 mhz t=+25 c 28 29 30 31 32 33 920 930 940 950 960 p1db (dbm) frequency (mhz) p1db vs. frequency t=+25 c -55 -50 -45 -40 -35 20 21 22 23 24 25 26 aclr (dbc) output channel power (dbm) aclr vs. pout vs. temp 3gpp wcdma,tm1+64dpch, 5 mhz offset, 940 mhz - 40 c +25 c +85 c -55 -50 -45 -40 -35 20 21 22 23 24 25 26 aclr (dbc) output channel power (dbm) aclr vs. pout vs. freq 3gpp wcdma, tm1+64dpch, 5 mhz offset 920 mhz 940 mhz 960 mhz t=+25 c 2 4 6 8 10 12 920 930 940 950 960 nf (db) frequency (mhz) noise figure vs. frequency vs. temp - 40 c +25 c +85 c 30 35 40 45 50 55 17 19 21 23 25 oip3 (dbm) pout / tone (dbm) oip3 vs. pout/tone vs. temp 1 mhz spacing, 940 mhz - 40 c +25 c +85 c 30 35 40 45 50 55 17 19 21 23 25 oip3 (dbm) pout / tone (dbm) oip3 vs. pout/tone vs. freq 1 mhz spacing 920 mhz 940 mhz 960 mhz t=+25 c 30 35 40 45 50 55 920 930 940 950 960 oip3 (dbm) frequency (mhz) oip3 vs. frequency 1 mhz spacing, 22 dbm / tone pout t=+25 c
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 8 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? reference design 1475-1510 mhz c3 j5 j3 c15 r2 c10 c11 c5 c12 j4 l1 c7 r3 r1 l3 l4 r6 r7 fb1 c17 d3 c6 u1 c9 l2 typical performance 1475-1510 mhz notes: 1. aclr test set-up: 3gpp wcdma, tm1+64 dpch, +5 mhz off set, par = 10.2 db at 0.01% prob. 2. evm test set-up: 802.16 ? 2004 ofdma, 64 qam ? ?, 1024 f ft, 20 symbols, 30 sub channels. frequency mhz 1475 1490 1510 gain db 17 17 17 input return loss db 17.5 17.2 15.2 output return loss db 10 11 13 output p1db dbm +31.4 +31.3 +31 output ip3 at 19 dbm/tone, ? f = 1 mhz dbm +47.6 +48 +47 wcdma channel power at - 50 dbc aclr [ 1 ] dbm +22 +22 +21.8 ofdma channel power at 2.5% evm [ 2 ] dbm +23.9 +23.9 +23.7 supply voltage, vcc v +5 quiescent collector current, icq ma 300 notes: 1. see pc board layout, page 20 for more information. 2. vref j4 turret can be used as control voltage for device po wer down (low = rf off) by setting r8 = 0 and r8 = no connect. 3. the primary rf microstrip characteristic line impedance i s 50 . 4. do not exceed +5.5v on vpd or vcc or tvs diode d3 will be damaged. 5. components shown on the silkscreen but not on the schematic are n ot used. 6. the edge of l2 is placed against the edge of c9. 7. the edge of c9 is placed at 75 mils from the edge of ah225 rfin pin pad (6 at 1490 mhz). 8. the edge of c2 is placed at 300 mils from the edge of ah225 rfout pin pad (24 at 1490 mhz). 9. zero ohm jumpers may be replaced with copper traces in the target application layout. 10. dnp means do not place. 11. inductor l3 on vpd line is critical for linearity performanc e. 12. the locations of c11, r2, c10 and c3 are non-critical. the y can be placed closer to the device. 13. ferrite bead fb1 eliminates bypass line resonances between c15 and c1. steward mi0603k300r-10. 14. all components are of 0603 size unless stated otherwise. j2 rf output j5 gnd j3 vcc=+5v l1 18 nh 1008 c9 1.8 pf u1 ah225 c17 0.1 uf 0805 c12 1000 pf backside paddle j4 vref c6 10 pf c2 3.3 pf fb1 d3 sm05t1g l4 0 l3 22 nh r3 51 r1 120 r8 dnp r6 0 r7 0 l2 2.2 nh c15 10 pf c3 0 r2 51 c10 22 pf j1 rf input c11 0 c7 10 uf 6032 87 6 5 12 3 4 vpd
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 9 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? typical performance plots 1475-1510 mhz 13 14 15 16 17 18 1400 1450 1500 1550 1600 s21 (db) frequency (mhz) s21 vs. frequency t=+25 c -25 -20 -15 -10 -5 0 1400 1450 1500 1550 1600 return loss (db) frequency (mhz) return loss vs. frequency s11 s22 t=+25 c 28 29 30 31 32 33 1475 1485 1495 1505 1515 p1db (dbm) frequency (mhz) p1db vs. frequency t=+25 c -60 -55 -50 -45 -40 -35 -30 19 20 21 22 23 24 25 aclr (dbc) pout (dbm) aclr vs. pout vs. freq 3gpp wcdma,tm1+64dpch,+5 mhz offset t=+25 c 1475 mhz 1490 mhz 1510 mhz 0 0.5 1 1.5 2 2.5 3 19 20 21 22 23 24 evm (%) pout (dbm) evm vs. pout vs. freq ofdm, qam-64, 54 mb/s, +25 ? c t=+25 c 1475 mhz 1490 mhz 1510 mhz 30 35 40 45 50 55 17 19 21 23 25 oip3 (dbm) pout / tone (dbm) oip3 vs. pout / tone vs. freq 1 mhz spacing t=+25 c 1475 mhz 1490 mhz 1510 mhz
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 10 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? reference design 1805-1880 mhz c9 c3 j5 j3 c15 r2 c10 c11 c5 c1 c12 j4 l1 c7 l5 l2 r3 r1 l3 l4 r6 r7 fb1 c17 d3 c6 u1 notes: 1. see pc board layout, page 20 for more information. 2. vref j4 turret can be used as control voltage for device po wer down (low = rf off) by setting r8 = 0 and r8 = no connect. 3. the primary rf microstrip characteristic line impedance i s 50 . 4. do not exceed +5.5v on vpd or vcc or tvs diode d3 will be damaged. 5. components shown on the silkscreen but not on the schematic are n ot used. 6. the edge of c9 is placed at 10 mils from the edge of ah225 rfin pin pad (0.5 at 1840 mhz). 7. the edge of l2 is placed against the edge of l5. 8. the edge of c6 is placed at 80 mils from the edge of ah225 rfout pin pad (8 at 1840 mhz). 9. the edge of c5 is placed against the edge of c6. 10. zero ohm jumpers may be replaced with copper traces in the target application layout. 11. dnp means do not place. 12. inductor l3 on vpd line is critical for linearity performanc e. 13. the locations of c11, r2, c10 and c3 are non-critical. the y can be placed closer to the device. 14. ferrite bead fb1 eliminates bypass line resonances between c15 and c1. steward mi0603k300r-10. 15. all components are of 0603 size unless stated otherwise. typical performance 1805-1880 mhz notes: 1. aclr test set-up: 3gpp wcdma, tm1+64 dpch, +5 mhz off set, par = 10.2 db at 0.01% prob. 2. evm test set-up: 802.16 ? 2004 ofdma, 64 qam ? ?, 1024 f ft, 20 symbols, 30 sub channels. frequency mhz 1805 1840 1880 gain db 15.1 15.1 15.1 input return loss db 12 11 10 output return loss db 9.5 10.7 12 output p1db dbm +30.8 +30.7 +30.6 output ip3 at 19 dbm/tone, ? f = 1 mhz dbm +46.2 +46 +45 wcdma cha nnel power at - 50 dbc aclr [1 ] dbm +21.7 +21.6 +21.4 ofdma channel power at 2.5% evm [ 2 ] dbm +23.6 +23.5 +23.3 noise figure db 5.7 5.7 5.8 supply voltage, vcc v +5 quiescent collector current, icq ma 300
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 11 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? typical performance plots 1805-1880 mhz 12 13 14 15 16 17 1700 1750 1800 1850 1900 1950 2000 s21 (db) frequency (mhz) s21 vs. frequency t=+25 c -25 -20 -15 -10 -5 0 1700 1750 1800 1850 1900 1950 2000 return loss (db) frequency (mhz) return loss vs. frequency s11 s22 t=+25 c 27 28 29 30 31 32 1800 1820 1840 1860 1880 p1db (dbm) frequency (mhz) p1db vs. frequency t=+25 c -60 -55 -50 -45 -40 -35 -30 19 20 21 22 23 24 25 aclr (dbc) pout (dbm) aclr vs. pout vs. freq 3gpp wcdma, tm1+64dpch, 5 mhz offset t=+25 c 1880 mhz 1840 mhz 1805 mhz 0 0.5 1 1.5 2 2.5 3 19 20 21 22 23 24 evm (%) pout (dbm) evm vs. pout vs. freq ofdm, qam-64, 54 mb/s t=+25 c 1880 mhz 1840 mhz 1805 mhz 30 35 40 45 50 55 60 17 19 21 23 25 oip3 (dbm) pout / tone (dbm) oip3 vs. pout / tone vs. freq 1 mhz spacing t=+25 c 1880 mhz 1840 mhz 1805 mhz
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 12 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? application circuit 1930-1990 mhz (ah225-s8pcb1960) notes: 1. see pc board layout, page 20 for more information. 2. vref j4 turret can be used as control voltage for device po wer down (low = rf off) by setting r8 = 0 and r8 = no connect. 3. the primary rf microstrip characteristic line impedance i s 50 . 4. do not exceed +5.5v on vpd or vcc or tvs diode d3 will be damaged. 5. components shown on the silkscreen but not on the schematic are n ot used. 6. the edge of l2 is placed at 135 mils from the edge of ah225 r fin pin pad (14.7 1960 mhz). 7. the edge of c9 is placed at 75 mils from the edge of ah225 rfin pin pad (8.4 1960 mhz). 8. the edge of c2 is placed at 320 mils from the edge of ah225 rfout pin pad (33 at 1960 mhz). 9. the edge of c6 is placed at 85 mils from the edge of ah225 rfout pin pad (8.4 at 1960 mhz). 10. zero ohm jumpers may be replaced with copper traces in the target application layout. 11. dnp means do not place. 12. the locations of c11, r2, c10 and c3 are non-critical. the y can be placed closer to the device. 13. ferrite bead fb1 eliminates bypass line resonances between c15 and c1. steward mi0603k300r-10. 14. all components are of 0603 size unless stated otherwise. typical performance 1930-1990 mhz notes: 1. aclr test set-up: 3gpp wcdma, tm1+64 dpch, +5 mhz off set, par = 10.2 db at 0.01% prob. frequency mhz 1930 1960 1990 ga in db 15.2 15.4 15.6 input return loss db 16 15.4 14.5 output return loss db 7 8.3 9.6 output p1db dbm +31.2 +31.3 +31.1 output ip3 at 19 dbm/tone, ? f = 1 mhz dbm +51.3 +53.6 +47.5 wcdma channel power at - 50 dbc ac lr [1 ] dbm +21.8 +21.7 +21.7 noise figure db 5.9 5.9 6 supply voltage, vcc v +5 quiescent collector current, icq ma 300
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 13 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? typical performance plots 1930-1990 mhz 12 13 14 15 16 17 1930 1940 1950 1960 1970 1980 1990 s21 (db) frequency (mhz) s21 vs. frequency - 40 c +25 c +85 c -25 -20 -15 -10 -5 0 1930 1940 1950 1960 1970 1980 1990 s11 (db) frequency (mhz) s11 vs. frequency - 40 c +25 c +85 c -25 -20 -15 -10 -5 0 1930 1940 1950 1960 1970 1980 1990 s22 (db) frequency (mhz) s22 vs. frequency - 40 c +25 c +85 c -60 -55 -50 -45 -40 -35 -30 19 20 21 22 23 24 25 aclr (dbc) output channel power (dbm) aclr vs. pout vs. freq 3gpp wcdma, tm1+64dpch, 5 mhz offset 1930 mhz 1960 mhz 1990 mhz t=+25 c 30 35 40 45 50 55 17 19 21 23 25 oip3 (dbm) pout / tone (dbm) oip3 vs. pout / tone vs. freq 1 mhz spacing 1930 mhz 1960 mhz 1990 mhz t=+25 c 35 40 45 50 55 60 17 19 21 23 25 oip3 (dbm) output power/tone (dbm) oip3 vs. pout/tone vs. bias voltage 1960 mhz, 1mhz spacing t=+25 c 4.75 v 5 v 5.25 v -60 -55 -50 -45 -40 -35 -30 19 20 21 22 23 24 25 aclr (dbc) pout (dbm) aclr vs. pout vs bias voltage 3gppwcdma,tm1+64dpch,5 mhz offset,1960 mhz t=+25 c 4.75 v 5 v 5.25 v 28 29 30 31 32 33 1930 1940 1950 1960 1970 1980 1990 p1db (dbm) frequency (mhz) p1db vs. freq vs. bias voltage t=+25 c 4.75 v 5 v 5.25 v 200 250 300 350 400 450 19 20 21 22 23 24 25 device current (ma) pout (dbm) total device current vs. pout vs. bias voltage total device current include icc, iref, ibias, 1960 mhz t=+25 c 4.75 v 5 v 5.25 v 35 40 45 50 55 60 1930 1940 1950 1960 1970 1980 1990 oip3 (dbm) frequency (mhz) oip3 vs. p1db vs. frequency 1 mhz spacing, 19 dbm / tone pout t=+25 c 0 2 4 6 8 10 1930 1940 1950 1960 1970 1980 1990 nf (db) frequency (mhz) noise figure vs. frequency - 40 c +25 c +85 c 0 2 4 6 8 10 4.75 4.85 4.95 5.05 5.15 5.25 nf (db) voltage (v) noise figure vs. bias voltage t=+25 c f=1960 mhz
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 14 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? reduced bias configurations application note the ah225 can be configured to be operated with lower bia s current by varying the vpd resistor-r1 as highlighted on the schematic below. lowering the current has little effect on the gain, oip3, and p1db performance of the device, but w ill slightly lower the aclr performance of the device as s hown below. it is expected that variation of the bias current for other frequency applications will produce similar performance re sults. the data below represents data taken from the ah225- s8pcb1960 with data taken at 1960 mhz. notes: 1. oip3 is measured with two tones at output power of 19 dbm / tone separated by 1 mhz spacing. 2. aclr test set-up: 3gpp wcdma, tm1+64 dpch, +5 mhz off set, par = 10.2 db at 0.01% prob. pout (channel powe r) at -50 dbc aclr is shown in the table above. -60 -55 -50 -45 -40 -35 -30 19 20 21 22 23 24 25 aclr (dbc) pout (dbm) aclr vs. pout vs. bias current 3gppwcdma,tm1+64dpch, 5 mhz offset,1960 mhz t=+25 c 1 0 0m a 2 0 0m a 3 0 0m a 4 0 0m a 5 0 0m a 30 35 40 45 50 55 17 19 21 23 25 oip3 (dbm) pout / tone (dbm) oip3 vs. pout / tone vs. bias current 1960 mhz, 1 mhz spacing t=+25 c 1 0 0m a 2 0 0m a 3 0 0m a 4 0 0m a 5 0 0m a 28 29 30 31 32 33 100 200 300 400 500 p1db (dbm) current (ma) p1db vs. current t=+25 c r1 ( ) icq (ma) gain (db) pdiss (w) p1db (dbm) oip3 (dbm) 1 pout (dbm) 2 56.2 500 15.6 2.5 +30.9 +48.7 +21.4 82 400 15.4 2 +30.9 +48.7 +21.6 120 300 15.2 1.5 +30.9 +48.5 +21.4 200 200 14.8 1 +31.1 +43.5 +19.9 403 100 14 0.5 +31.4 +37.7 +15
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 15 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? application circuit 2110-2170 mhz (ah225-s8pcb2140 ) notes: 1. see pc board layout, page 20 for more information. 2. vref j4 turret can be used as control voltage for device po wer down (low = rf off) by setting r8 = 0 and r8 = no connect. 3. the primary rf microstrip characteristic line impedance i s 50 . 4. do not exceed +5.5v on vpd or vcc or tvs diode d3 will be damaged. 5. components shown on the silkscreen but not on the schematic are n ot used. 6. the edge of l2 is placed at 205 mils from the edge of ah225 rf in pin pad (23 at 2140 mhz). 7. the edge of c9 is placed at 80 mils from the edge of ah225 rfin pin pad (9 at 2140 mhz). 8. the edge of c2 is placed at 205 mils from the edge of ah225 rfout pin pad (23 at 2140 mhz). 9. the edge of c6 is placed at 80 mils from the edge of ah225 rfout pin pad (9 at 2140 mhz). 10. zero ohm jumpers may be replaced with copper traces in the target application layout. 11. dnp means do not place. 12. inductor l3 on vpd line is critical for linearity performanc e. 13. the locations of c11, r2, c10 and c3 are non-critical. the y can be placed closer to the device. 14. ferrite bead fb1 eliminates bypass line resonances between c15 and c1. steward mi0603k300r-10. 15. all components are of 0603 size unless stated otherwise. typical performance 2110-2170 mhz notes: 1. aclr test set-up: 3gpp wcdma, tm1+64 dpch, +5 mhz off set, par = 10.2 db at 0.01% prob. frequency mhz 2110 2140 2170 gain db 15. 2 15. 5 15. 6 input re turn loss db 2 0 18 1 7 output return loss db 7.7 9.4 12 output p1db dbm +31.5 +31 .2 +31 .1 output ip3 at 19 dbm/tone, ? f = 1 mhz dbm +45.6 +46 +46.1 wcdma channel power at - 50 dbc aclr [1 ] dbm +2 0.9 +21. 3 +21 noise figure db 6 6 5.9 supply voltage, vc c v +5 quiescent collector current, icq ma 300
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 16 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? typical performance plots 2110-2170 mhz 12 13 14 15 16 17 2110 2120 2130 2140 2150 2160 2170 s21 (db) frequency (mhz) s21 vs. frequency - 40 c +25 c +85 c -30 -25 -20 -15 -10 -5 0 2110 2120 2130 2140 2150 2160 2170 s11 (db) frequency (mhz) s11 vs. frequency - 40 c +25 c +85 c -25 -20 -15 -10 -5 0 2110 2120 2130 2140 2150 2160 2170 s11 (db) frequency (mhz) s22 vs. frequency - 40 c +25 c +85 c 13 14 15 16 17 18 25 26 27 28 29 30 31 32 gain (db) pout (dbm) gain vs. pout vs. temp - 40 c +25 c +85 c freq=2140 mhz 300 350 400 450 500 550 22 24 26 28 30 icc (ma) pout (dbm) icc vs. pout 3gpp wcdma, tm1+64dpch, 5 mhz offset, 2140 mhz t=+25 c 28 29 30 31 32 33 2110 2120 2130 2140 2150 2160 2170 p1db (dbm) frequency (mhz) p1db vs. frequency t=+25 c -60 -55 -50 -45 -40 -35 19 20 21 22 23 24 25 aclr (dbc) output channel power (dbm) aclr vs. pout vs. temp 3gpp wcdma, tm1+64dpch, 5 mhz offset, 2140 mhz - 40 c +25 c +85 c -60 -55 -50 -45 -40 -35 19 20 21 22 23 24 25 aclr (dbc) channel output power (dbm) aclr vs. pout vs. freq 3gpp wcdma, tm1+64dpch, 5 mhz offset 2110 mhz 2140 mhz 2170 mhz 0 2 4 6 8 10 2110 2120 2130 2140 2150 2160 2170 nf (db) frequency (mhz) noise figure vs. frequency vs. temp - 40 c +25 c +85 c 30 35 40 45 50 55 17 19 21 23 25 oip3 (dbm) pout / tone (dbm) oip3 vs. pout/tone vs. temp 1 mhz spacing, 2140 mhz - 40 c +25 c +85 c 30 35 40 45 50 55 17 19 21 23 25 oip3 (dbm) pout / tone (dbm) oip3 vs. pout/tone vs. freq 1 mhz spacing 2110 mhz 2140 mhz 2170 mhz 30 35 40 45 50 55 2110 2120 2130 2140 2150 2160 2170 oip3 (dbm) frequency (mhz) oip3 vs. frequency 1 mhz spacing, 19 dbm / tone pout t=+25 c
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 17 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? reference design 2500-2700 mhz notes: 1. see pc board layout, page 20 for more information. 2. vref j4 turret can be used as control voltage for device po wer down (low = rf off) by setting r8 = 0 and r8 = no connect. 3. the primary rf microstrip characteristic line impedance i s 50 . 4. do not exceed +5.5v on vpd or vcc or tvs diode d3 will be damaged. 5. components shown on the silkscreen but not on the schematic are n ot used. 6. the edge of c6 is placed at 80 mils from the edge of ah225 rfout pin pad (10.5 at 2600 mhz). 7. the edge of c5 is placed at 10 mils from the edge of ah225 rfout pin pad (1.5 at 2600 mhz). 8. the edge of r5 is placed at 5 mils from the edge of ah225 rf in pin pad (1 at 2600 mhz). 9. the edge of c9 is placed at 10 mils from the edge of r5 ( 1.5 at 2600 mhz). 10. l2 is placed against the edge of c9. 11. zero ohm jumpers may be replaced with copper traces in the target application layout. 12. dnp means do not place. 13. the multilayer inductor l3 on vpd line is critical for linea rity performance. 14. the locations of c11, r2, c10 and c3 are non-critical. the y can be placed closer to the device. 15. ferrite bead fb1 eliminates bypass line resonances between c15 and c1. steward mi0603k300r-10. 16. all components are of 0603 size unless stated otherwise. typical performance 2500-2700 mhz notes: 1. aclr test set-up: 3gpp wcdma, tm1+64 dpch, +5 mhz off set, par = 10.2 db at 0.01% prob. 2. evm test set-up: 802.16 ? 2004 ofdma, 64 qam ? ?, 1024 f ft, 20 symbols, 30 sub channels. frequency mhz 2500 2600 2700 gain db 12.9 13.2 12.8 input return loss db 13.3 19.4 15.8 output return loss db 5.2 5.5 6.4 output p1db dbm +30.4 +30.5 +30.2 output ip3 at 19 dbm/tone, ? f = 1 mhz dbm +50 +48.7 +44.8 wcdma channel power at - 50 dbc aclr [1 ] dbm +21.3 +21.3 +20.9 ofdma channel power at 2.5% evm [ 2 ] dbm +23 +23 +22.7 supply voltage, vcc v +5 quiescent collector current, icq ma 300
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 18 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? typical performance plots 2500-2700 mhz 10 11 12 13 14 15 2400 2500 2600 2700 gain (db) frequency (mhz) s21 vs. frequency t=+25 c -25 -20 -15 -10 -5 0 2400 2500 2600 2700 return loss (db) frequency (mhz) return loss vs. frequency s11 s22 t=+25 c 27 28 29 30 31 32 2500 2550 2600 2650 2700 p1db (dbm) frequency (mhz) p1db vs. frequency t=+25 c -60 -55 -50 -45 -40 -35 -30 19 20 21 22 23 24 25 aclr (dbc) pout (dbm) aclr vs. pout vs. freq 3gpp wcdma, tm1+64dpch, 5 mhz offset t=+25 c 2500 mhz 2600 mhz 2700 mhz 0 0.5 1 1.5 2 2.5 3 19 20 21 22 23 24 evm (%) pout (dbm) evm vs. pout vs. freq ofdm, qam-64, 54 mb/s t=+25 c 2500 mhz 2600 mhz 2700 mhz 30 35 40 45 50 55 17 19 21 23 25 oip3 (dbm) pout / tone (dbm) oip3 vs. pout / tone vs. freq 1 mhz spacing t=+25 c 2500 mhz 2600 mhz 2700 mhz
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 19 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? pin description 12 3 4 87 6 5 vbias n/c rf_in n/c iref rf_out rf_out n/c backside paddle - rf/dc gnd pin 1 reference mark pin symbol description 1 vbias voltage supply for active bias. connect to same supply volt age as vcc. 2, 4, 5 n/c no internal connection. this pin can be grounded or n/ c on pcb. 3 rf _ in rf input . r equires match ing for operation. 6 rf _ out rf output and dc supply voltage. 7 rf _ out see pin 6. 8 iref reference current into internal active bias current m irror. current into iref sets device quiescent current. also, can be used as on/off control. backside paddle rf/dc gnd use recommended via pattern shown on page 20 and ensure good solder attach for optimum thermal and electrical performance. application board information pc board layout top rf layer is .014? getek, ? r = 4.0, 4 total layers (0.062? thick) for mechanical rigidity. metal layers are 1- oz copper. microstrip line details: width = .030?, spacing = .026?. the silk screen markers ?a?, ?b?, ?c?, etc. and ?1?, ?2? , ?3?, etc. are used as placemarkers for the input and output tuning shunt capacitors ? c8, c5 and c2. the markers and vias are spaced in .050? increments. the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes vary from company to company, careful process development is recommended. for further technical information, refer to www.triquint.com
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 20 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? mechanical information package information and dimensions this package is lead - free/rohs - complia nt. the plating material on the leads is nipdau. it is compatible with both lead-free (maximum 260 c reflow temperature) and lead (maximum 245 c reflow temperature) soldering processes. the ah225 will be marked with an ?ah225g? designator with a lot code marked below the part designator. the ?y? represents the last digit of the year the part was manufactured, the ?xxxx? is an auto- generated number, and ?z? refers to a wafer number in a lot batch. mounting configuration notes: 1. a heat sink underneath the area of the pcb for the mounted devic e is strictly required for proper thermal operation. dam age to the device can occur without the use of one. 2. ground / thermal vias are critical for the proper perfor mance of this device. vias should use a .35mm (#80 / .0135?) d iameter drill and have a final plated thru diameter of .25 mm (.010?) or e quivalent. 3. add as much copper as possible to inner and outer layers near t he part to ensure optimal thermal performance. 4. mounting screws can be added near the part to fasten the boar d to a heat sink. ensure that the ground / thermal via regio n contact the heat sink. 5. do not put solder mask on the backside of the pc board in the region where the board contacts the heat sink. 6. rf trace width depends upon the pc board material and construct ion. 7. use 1 oz. copper minimum. 8. all dimensions are in millimeters (inches). angles are i n degrees.
ah225 1w high linearity ingap hbt amplifier data sheet: rev f 0 5/17 / 1 2 - 21 of 21 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the d igital world to the global network ? product compliance information esd information esd rating: class 1c value: passes 1000 v min. test: human body model (hbm) standard: jedec standard jesd22a114-e esd rating: class iv value: passes 1000 v min. test: charged device model (cdm) standard: jedec standard jesd22c101-c solderability compatible with the latest version of j-std-020, lead free solder, 260. this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating level 2 at +260 c convection reflow the part is rated moisture sensitivity level 2 at 260 c per jedec standard ipc/jedec j-std-020. contact information for the latest specifications, additional product infor mation, worldwide sales and distribution locations, and in formation about triquint: web: www.triquint.com tel: +1.503.615.9000 email: info-sales@tqs.com fax: +1.503.615.8902 for technical questions and application information: email: sjcapplications.engineering@tqs.com important notice the information contained herein is believed to be rel iable. triquint makes no warranties regarding the inf ormation contained herein. triquint assumes no responsibility or liabi lity whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the info rmation contained herein is provided "as is, where is" and with all faul ts, and the entire risk associated with such informatio n is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and v erify the latest relevant information before placing orders for triquint p roducts. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other i ntellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for us e as critical components in medical, life-saving, or li fe-sustaining applications, or other applications where a failure wo uld reasonably be expected to cause severe personal injury o r death.

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